g2sba20, g2sba60, g2sba80 www.vishay.com vishay general semiconductor revision: 16-aug-13 1 document number: 88604 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 glass passivated single-p hase bridge rectifier features ? ul recognition file number e54214 ? ideal for printed circuit boards ? high surge current capability ? typical i r less than 0.1 a ? high case dielectric strength ? solder dip 275 c max. 10 s, per jesd 22-b106 ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 typical applications general purpose use in ac/dc bridge full wave rectification for monitor, tv, printer, smps, adapter, audio equipment, and home appliances applications. mechanical data case: gbl ? molding compound meets ul 94 v-0 flammabi lity rating ? base p/n-e3 - rohs-co mpliant, commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 ? e3 suffix meets jesd 201 class 1a whisker test polarity: as marked on body primary characteristics package gbl i f(av) 1.5 a v rrm 200 v, 600 v, 800 v i fsm 60 a i r 5 a v f at i f = 0.75 v 1.0 v t j max. 150 c diode variations in-line case type g bl ~ ~ ~ ~ maximum ratings (t a = 25 c unless otherwise noted) parameter symbol g2sba20 g2sba60 g2sba80 unit maximum repetitive peak reverse voltage v rrm 200 600 800 v maximum rms voltage v rms 140 420 560 v maximum dc blocking voltage v dc 200 600 800 v maximum average forward rectified output current at t a = 25 c i f(av) 1.5 a peak forward surge current single sine-wave superimposed on rated load i fsm 60 a rating for fusing (t < 8.3 ms) i 2 t15a 2 s operating junction and storage temperature range t j , t stg - 55 to + 150 c electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions sy mbol g2sba20 g2sba60 g2sba80 unit maximum instantaneous forward voltage drop per diode 0.75 a v f 1.00 v maximum dc reverse current at rated dc blocking voltage per diode t a = 25 c i r 5.0 a t a = 125 c 300
g2sba20, g2sba60, g2sba80 www.vishay.com vishay general semiconductor revision: 16-aug-13 2 document number: 88604 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note ? unit mounted on pcb with 0.5" x 0.5" (12 mm x 12 mm) copper pads and 0.375" (9.5 mm) lead length ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - derating curve output rectified current fig. 2 - maximum non-repetitive peak forward surge current per diode fig. 3 - typical forward characteristics per diode fig. 4 - typical reverse char acteristics per diode thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol g2sba20 g2sba60 g2sba80 unit typical thermal resistance r ? ja 40 c/w r ? jc 12 ordering information (example) preferred p/n unit weight (g ) preferred package code ba se quantity delivery mode g2sba60-e3/45 2.017 45 20 tube g2sba60-e3/51 2.017 51 400 anti-static pvc tray 0 0.5 1.0 1.5 2.0 75 50 25 0 100 125 150 temperat u re (c) a v erage for w ard o u tp u t (i f(av) ) p.c.b. mo u nting, t a 0 20 40 60 80 100 1 100 nu mber of cycles at 60 hz peak for w ard s u rge c u rrent (a) 10 1.0 cycle 0.01 0.1 1 10 100 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 instantaneo u s for w ard voltage (v) instantaneo u s for w ard c u rrent (a) 0.01 0.1 1 10 100 80 60 40 20 0 100 percent of rated peak re v erse voltage (%) instantaneo u s re v erse c u rrent (a) t a = 125 c t a = 25 c
g2sba20, g2sba60, g2sba80 www.vishay.com vishay general semiconductor revision: 16-aug-13 3 document number: 88604 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - typical junction capacitance per diode fig. 6 - typical transient thermal impedance ? package outline dimensions in inches (millimeters) 10 100 0.1 100 10 1 re v erse voltage (v) j u nction capaci tance (pf) 1 0.01 0.1 1 10 100 0.01 0.1 10 1 100 t - heating time (s) transient thermal impedance (c/w) case type gbl 0.125 (3.17) x 45 chamfer 0.825 (20.9) 0.815 (20.7) 0.421 (10.7) 0.411 (10.4) 0.718 (18.2) 0.682 (17.3) 0.098 (2.5) 0.075 (1.9) lead depth 0.022 (0.56) 0.018 (0.46) 0.210 (5.3) 0.190 (4.8) 0.040 (1.02) 0.030 (0.76) 0.140 (3.56) 0.128 (3.25) 0.022 (0.56) 0.018 (0.46) 0.050 (1.27) 0.040 (1.02) 0.098 (2.5) 0.075 (1.9) 0.095 (2.41) 0.080 (2.03) 0.080 (2.03) 0.060 (1.50) polarity sho w n on front side of case, positi v e lead be v eled corner
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